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| - Ordering Information BVDSS / BVDGS 500V RDS(ON) (max) 1.0K ID(ON) (min) 3.0mA - ETE LNE150 OBSOL Preliminary N-Channel Enhancement-Mode DMOS FETs Order Number / Package TO-236AB* LNE150K1 Die LNE150ND Product marking for TO-236AB: NEE where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. 7 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Advanced DMOS Technology This low threshold Enhancement-mode (normally-off) transistor utilizes an advanced DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex's DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interface - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drive Analog switches General purpose line drivers Telecom switches Source Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS -0.7V to +10V -55C to +150C 300C Gate Drain TO-236AB (SOT-23) top view 7-21 LNE150 Thermal Characteristics Package TO-236AB ID (continuous)* 3mA ID (pulsed) 20mA Power Dissipation @ TA = 25C 0.36W jc a IDR 3mA IDRM 20mA C/W 200 C/W 350 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS BVGSS V SG ISG VGS(TH) VGS(TH) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS tON tOFF VSD Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Diode Breakdown Voltage Source-to-Gate diode Forward Voltage Drop Source-to-Gate Continuous Diode Current Gate Threshold Voltage Change in VGS(TH) with Temperature Gate Body Leakage Current Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode forward Voltage Drop 12 2 0.8 10 10 1.8 V ns pF 3 1.0 1.1 0.6 Min 500 10 0.7 3 2.5 -4.5 50 100 Typ Max Unit V V V mA V mV/C nA nA mA K %/C - ETE - OBSOL Conditions VGS = 0V, ID = 100A IGS = 100A ISG = 100A VDS = 0V VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = +5.0V, VDS = 0V VGS =0V, VDS = 500V VGS = 5.0V, VDS = 25V VGS = 5.0V, ID = 500A VGS = 0V, ID = 500A VGS = 0V, VDS = 25V, f=1.0MHz VGS = 0V to 5V, RGEN = 100, VDD = 1.0V, Rload = 200 VGS = 0V, ISD = 3.0mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 5V 90% INPUT 0V RL PULSE GENERATOR Rgen OUTPUT 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 7-22 |
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